bss138lt1rev2.pdf

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BSS138LT1
Preferred Device
Power MOSFET
200 mAmps, 50 Volts
N–Channel SOT–23
Typical applications are dc–dc converters, power management in
portable and battery–powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
•
Low Threshold Voltage (VGS(th): 0.5V...1.5V) makes it ideal for low
voltage applications
•
Miniature SOT–23 Surface Mount Package saves board space
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Drain Current
– Continuous @ TA = 25°C
– Pulsed Drain Current (tp
≤
10
µs)
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature
Range
Thermal Resistance – Junction–to–Ambient
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
Symbol
VDSS
VGS
ID
IDM
PD
TJ, Tstg
R
θJA
TL
Value
50
±
20
200
800
225
– 55 to
150
556
260
mW
°C
°C/W
°C
3
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200 mAMPS
50 VOLTS
RDS(on) = 3.5
W
N–Channel
3
Unit
Vdc
Vdc
mA
1
2
MARKING
DIAGRAM
1
2
SOT–23
CASE 318
STYLE 21
J1
W
W
= Work Week
PIN ASSIGNMENT
Drain
3
1
2
Gate
Source
ORDERING INFORMATION
Device
BSS138LT1
BSS138LT3
Package
SOT–23
SOT–23
Shipping
3000 Tape & Reel
10,000 Tape & Reel
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2000
1
November, 2000 – Rev. 2
Publication Order Number:
BSS138LT1/D
BSS138LT1
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
µAdc)
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc)
Gate–Source Leakage Current (VGS =
±
20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS
(Note 1.)
Gate–Source Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
Static Drain–to–Source On–Resistance
(VGS = 2.75 Vdc, ID < 200 mAdc, TA = –40°C to +85°C)
(VGS = 5.0 Vdc, ID = 200 mAdc)
Forward Transconductance
(VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
(VDG = 25 Vdc, VGS = 0, f = 1 MHz)
Ciss
Coss
Crss
–
–
–
40
12
3.5
50
25
5.0
pF
VGS(th)
rDS(on)
–
–
gfs
100
5.6
–
–
10
3.5
–
mmhos
0.5
–
1.5
Vdc
Ohms
V(BR)DSS
IDSS
–
–
IGSS
–
–
–
–
0.1
0.5
±0.1
µAdc
50
–
–
Vdc
µAdc
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS
(Note 2.)
Turn–On Delay Time
Turn–Off Delay Time
(VDD = 30 Vdc, ID = 0.2 Adc,)
Vdc
0 2 Adc )
1. Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2%.
2. Switching characteristics are independent of operating junction temperature.
td(on)
td(off)
–
–
–
–
20
20
ns
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2
BSS138LT1
TYPICAL ELECTRICAL CHARACTERISTICS
0.8
I D , DRAIN CURRENT (AMPS)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
1
2
3
4
5
6
7
8
9
10
0.9
0.8
I D , DRAIN CURRENT (AMPS)
VGS = 3.25 V
VGS = 3.0 V
VGS = 2.75 V
VGS = 2.5 V
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
TJ = 25°C
VGS = 3.5 V
VDS = 10 V
-55°C
25°C
150°C
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
-55
-5
45
95
145
0.75
-55
-30
VGS = 4.5 V
ID = 0.5 A
VGS = 10 V
ID = 0.8 A
1.25
Figure 2. Transfer Characteristics
RDS(on) , DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
ID = 1.0 mA
Vgs(th) , VARIANCE (VOLTS)
1.125
1
0.875
-5
20
45
70
95
120
145
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. On–Resistance Variation with
Temperature
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
10
8
6
4
ID = 200 mA
2
0
VDS = 40 V
TJ = 25°C
Figure 4. Threshold Voltage Variation
with Temperature
0
500
1000
1500
2000
2500
3000
QT, TOTAL GATE CHARGE (pC)
Figure 5. Gate Charge
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3
BSS138LT1
TYPICAL ELECTRICAL CHARACTERISTICS
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
10
9
8
7
6
5
4
3
2
1
0
0.05
0.1
0.15
0.2
0.25
-55°C
25°C
8
7
6
5
4
3
2
1
0
0.05
0.1
0.15
0.2
25°C
-55°C
0.25
VGS = 2.5 V
150°C
VGS = 2.75 V
150°C
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
Figure 6. On–Resistance versus Drain Current
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
-55°C
25°C
4.5
4
3.5
3
2.5
2
1.5
1
Figure 7. On–Resistance versus Drain Current
VGS = 4.5 V
150°C
VGS = 10 V
150°C
25°C
-55°C
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
Figure 8. On–Resistance versus Drain Current
Figure 9. On–Resistance versus Drain Current
1
I D , DIODE CURRENT (AMPS)
120
100
0.1
TJ = 150°C
25°C
-55°C
80
60
0.01
40
20
Ciss
Coss
Crss
0
5
10
15
20
25
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
0
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 10. Body Diode Forward Voltage
Figure 11. Capacitance
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BSS138LT1
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
0.037
0.95
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT–23 POWER DISSIPATION
The power dissipation of the SOT–23 is a function of the
drain pad size. This can vary from the minimum pad size
for soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction
temperature of the die, R
θJA
, the thermal resistance from
the device junction to ambient, and the operating
temperature, TA. Using the values provided on the data
sheet for the SOT–23 package, PD can be calculated as
follows:
PD =
TJ(max) – TA
R
θJA
one can calculate the power dissipation of the device which
in this case is 225 milliwatts.
PD =
150°C – 25°C
556°C/W
= 225 milliwatts
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 225
milliwatts. There are other alternatives to achieving higher
power dissipation from the SOT–23 package. Another
alternative would be to use a ceramic substrate or an
aluminum core board such as Thermal Cladt. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
•
Always preheat the device.
•
The delta temperature between the preheat and
soldering should be 100°C or less.*
•
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
•
The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
•
When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
•
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
•
Mechanical stress or shock should not be applied
during cooling.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
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